CNY65B

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Vishay General Semiconductor - Diodes Division

OPTOISOLATOR 8200V TRANS 4DIP

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Vishay General Semiconductor - Diodes Division

OPTOISOLATOR 8200V TRANS 4DIP

Technical Specifications

Parameters and characteristics for this part

Specification	CNY65B

Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	200 %
Current Transfer Ratio (Min) [Min]	100 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	4-EDIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]	2.7 µs
Rise / Fall Time (Typ) [custom]	2.4 µs
Supplier Device Package	4-DIP
Turn On / Turn Off Time (Typ) [custom]	3 µs
Turn On / Turn Off Time (Typ) [custom]	5 µs
Vce Saturation (Max) [Max]	300 mV
Voltage - Forward (Vf) (Typ)	1.25 V
Voltage - Isolation	8200 Vrms
Voltage - Output (Max) [Max]	32 V

Part	Voltage - Forward (Vf) (Typ)	Current Transfer Ratio (Min) [Min]	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Output (Max) [Max]	Input Type	Number of Channels	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Current Transfer Ratio (Max)	Package / Case	Turn On / Turn Off Time (Typ) [custom]	Turn On / Turn Off Time (Typ) [custom]	Current - Output / Channel	Vce Saturation (Max) [Max]	Voltage - Isolation	Output Type
Vishay General Semiconductor - Diodes Division CNY65AGRST	1.32 V	100 %	4-SMD	2.7 µs	2.4 µs	32 V	DC	1	85 °C	-55 °C	Surface Mount	300 %	4-SMD Gull Wing	3 µs	5 µs	50 mA	300 mV	8200 Vrms	1.81 mOhm
Vishay General Semiconductor - Diodes Division CNY65ST	1.32 V	50 %	4-SMD	2.7 µs	2.4 µs	32 V	DC	1	85 °C	-55 °C	Surface Mount	300 %	4-SMD Gull Wing	3 µs	5 µs	50 mA	300 mV	8200 Vrms	1.81 mOhm
Vishay General Semiconductor - Diodes Division CNY65B	1.25 V	100 %	4-DIP	2.7 µs	2.4 µs	32 V	DC	1	85 °C	-55 °C	Through Hole	200 %	4-EDIP (0.300" 7.62mm)	3 µs	5 µs	50 mA	300 mV	8200 Vrms	1.81 mOhm
Vishay General Semiconductor - Diodes Division CNY65BEXI	1.25 V	100 %	4-DIP	2.4 µs	2.4 µs	32 V	DC	1	100 °C	-55 °C	Through Hole	200 %	4-DIP (0.300" 7.62mm)	3 µs	5 µs	50 mA	300 mV	8200 Vrms	1.81 mOhm
Vishay General Semiconductor - Diodes Division CNY65AYST	1.32 V	50 %	4-SMD	2.7 µs	2.4 µs	32 V	DC	1	85 °C	-55 °C	Surface Mount	150 %	4-SMD Gull Wing	3 µs	5 µs	50 mA	300 mV	8200 Vrms	1.81 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Optoisolator Transistor Output 8200Vrms 1 Channel 4-DIP

Technical documentation and resources