IXTU02N50D

Active

IXYS

MOSFET N-CH 500V 200MA TO251

Search across all available documentation for this part.

Active

IXYS

MOSFET N-CH 500V 200MA TO251

Technical Specifications

Parameters and characteristics for this part

Specification	IXTU02N50D

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	120 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	1.1 W, 25 W
Rds On (Max) @ Id, Vgs	30 Ohm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Feature	Vgs (Max)	Technology	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
IXYS IXTU02N50D	1.1 W 25 W	10 V	5 V	30 Ohm	N-Channel	TO-251AA	200 mA	Depletion Mode	20 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	-55 °C	150 °C	500 V	120 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 200mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-251AA

Technical documentation and resources