MOSFET N-CH 500V 200MA TO251
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | FET Feature | Vgs (Max) | Technology | Package / Case | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 1.1 W 25 W | 10 V | 5 V | 30 Ohm | N-Channel | TO-251AA | 200 mA | Depletion Mode | 20 V | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | Through Hole | -55 °C | 150 °C | 500 V | 120 pF |