Specification	NXPSC04650Q

Capacitance	130 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage	170 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Package / Case	TO-220-2
Package Name	TO-220AC
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.7 V

NXPSC Series

Part	Current - Reverse Leakage	Current - Average Rectified (Io)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Technology	Capacitance	Voltage - Forward (Vf) (Max)	Package / Case	Operating Temperature - Junction (Max)	Package Name	Current - Average Rectified (Io) (per Diode)	Diode Pair Count	Diode Configuration
WeEn Semiconductors NXPSC08650BJ	230 µA	8 A	500 mA	No Recovery Time	500 mA 500 mA	Surface Mount	650 V	SiC (Silicon Carbide) Schottky	260 pF	1.7 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	D2PAK
WeEn Semiconductors NXPSC04650Q	170 µA	4 A	500 mA	No Recovery Time	500 mA 500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	130 pF	1.7 V	TO-220-2	175 °C	TO-220AC
WeEn Semiconductors NXPSC04650DJ	170 µA	4 A	500 mA	No Recovery Time	500 mA 500 mA	Surface Mount	650 V	SiC (Silicon Carbide) Schottky	130 pF	1.7 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C	DPak
WeEn Semiconductors NXPSC166506Q	100 µA	16 A	500 mA	No Recovery Time	500 mA 500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	534 pF	1.7 V	TO-220-2	175 °C	TO-220AC
WeEn Semiconductors NXPSC086506Q	230 µA	8 A	500 mA	No Recovery Time	500 mA 500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	260 pF	1.7 V	TO-220-2	175 °C	TO-220AC
WeEn Semiconductors NXPSC04650X6Q	170 µA	4 A	500 mA	No Recovery Time	500 mA 500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	130 pF	1.7 V	Isolated Tab TO-220-2 Full Pack	175 °C	TO-220F
WeEn Semiconductors NXPSC20650W6Q	250 µA		500 mA	No Recovery Time	500 mA 500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky		1.7 V	TO-247-3	175 °C	TO-247-3	20 A	1 pair	Common Cathode
WeEn Semiconductors NXPSC08650DJ	230 µA	8 A	500 mA	No Recovery Time	500 mA 500 mA	Surface Mount	650 V	SiC (Silicon Carbide) Schottky	260 pF	1.7 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C	DPak
WeEn Semiconductors NXPSC046506Q	170 µA	4 A	500 mA	No Recovery Time	500 mA 500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	130 pF	1.7 V	TO-220-2	175 °C	TO-220AC
WeEn Semiconductors NXPSC06650X6Q	200 µA	6 A	500 mA	No Recovery Time	500 mA 500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	190 pF	1.7 V 1.7 V	Isolated Tab TO-220-2 Full Pack	175 °C	TO-220F

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