NXPSC Series
Manufacturer: WeEn Semiconductors
DIODE SIL CARBIDE 650V 8A D2PAK
| Part | Current - Reverse Leakage | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Mounting Type | Voltage - DC Reverse (Vr) (Max) | Technology | Capacitance | Voltage - Forward (Vf) (Max) | Package / Case | Operating Temperature - Junction (Max) | Package Name | Current - Average Rectified (Io) (per Diode) | Diode Pair Count | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
WeEn Semiconductors | 230 µA | 8 A | 0 ns | 500 mA | No Recovery Time | 500 mA 500 mA | Surface Mount | 650 V | SiC (Silicon Carbide) Schottky | 260 pF | 1.7 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 175 °C | D2PAK | |||
WeEn Semiconductors | 170 µA | 4 A | 0 ns | 500 mA | No Recovery Time | 500 mA 500 mA | Through Hole | 650 V | SiC (Silicon Carbide) Schottky | 130 pF | 1.7 V | TO-220-2 | 175 °C | TO-220AC | |||
WeEn Semiconductors | 170 µA | 4 A | 0 ns | 500 mA | No Recovery Time | 500 mA 500 mA | Surface Mount | 650 V | SiC (Silicon Carbide) Schottky | 130 pF | 1.7 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 175 °C | DPak | |||
WeEn Semiconductors | 100 µA | 16 A | 0 ns | 500 mA | No Recovery Time | 500 mA 500 mA | Through Hole | 650 V | SiC (Silicon Carbide) Schottky | 534 pF | 1.7 V | TO-220-2 | 175 °C | TO-220AC | |||
WeEn Semiconductors | 230 µA | 8 A | 0 ns | 500 mA | No Recovery Time | 500 mA 500 mA | Through Hole | 650 V | SiC (Silicon Carbide) Schottky | 260 pF | 1.7 V | TO-220-2 | 175 °C | TO-220AC | |||
WeEn Semiconductors | 170 µA | 4 A | 0 ns | 500 mA | No Recovery Time | 500 mA 500 mA | Through Hole | 650 V | SiC (Silicon Carbide) Schottky | 130 pF | 1.7 V | Isolated Tab TO-220-2 Full Pack | 175 °C | TO-220F | |||
WeEn Semiconductors | 250 µA | 0 ns | 500 mA | No Recovery Time | 500 mA 500 mA | Through Hole | 650 V | SiC (Silicon Carbide) Schottky | 1.7 V | TO-247-3 | 175 °C | TO-247-3 | 20 A | 1 pair | Common Cathode | ||
WeEn Semiconductors | 230 µA | 8 A | 0 ns | 500 mA | No Recovery Time | 500 mA 500 mA | Surface Mount | 650 V | SiC (Silicon Carbide) Schottky | 260 pF | 1.7 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 175 °C | DPak | |||
WeEn Semiconductors | 170 µA | 4 A | 0 ns | 500 mA | No Recovery Time | 500 mA 500 mA | Through Hole | 650 V | SiC (Silicon Carbide) Schottky | 130 pF | 1.7 V | TO-220-2 | 175 °C | TO-220AC | |||
WeEn Semiconductors | 200 µA | 6 A | 0 ns | 500 mA | No Recovery Time | 500 mA 500 mA | Through Hole | 650 V | SiC (Silicon Carbide) Schottky | 190 pF | 1.7 V 1.7 V | Isolated Tab TO-220-2 Full Pack | 175 °C | TO-220F |