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Description

General part information

NX5020UNBKW Series

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationNX5020UNBKWX
Current - Continuous Drain (Id) (Ta)300 mA
Current - Continuous Drain (Id) (Tc)640 mA
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On)1.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)1 nC
Input Capacitance (Ciss) (Max)20.5 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-70, SOT-323
Package NameSOT-323
Power Dissipation (Max)1.5 W, 270 mW
Rds On (Max)1.8 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)950 mV

Pricing

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CAD

3D models and CAD resources for this part