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50 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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50 V, N-channel Trench MOSFET
50 V, N-channel Trench MOSFET
| Part | FET Type | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package / Case | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Mounting Type | Vgs (Max) | Package Name | Vgs(th) (Max) | Power Dissipation (Max) | Rds On (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | N-Channel | MOSFET (Metal Oxide) | 10 V | 1.5 V | SC-70 SOT-323 | 1 nC | -55 °C | 150 °C | 20.5 pF | Surface Mount | 20 V | SOT-323 | 950 mV | 1.5 W 270 mW | 1.8 Ohm | 50 V | 300 mA | 640 mA |