Specification	IRS2118SPBF

Channel Type	Single
Current - Peak Output (Sink)	600 mA
Current - Peak Output (Source)	290 mA
Driven Configuration	High-Side
Fall Time (Typ)	35 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	75 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS2118 Series

Part	Gate Type	Package Name	Gate Channel	Input Type	Logic Voltage - VIH	Logic Voltage - VIL	High Side Voltage - Max (Bootstrap)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Fall Time (Typ)	Rise Time (Typ)	Driven Configuration	Number of Drivers	Channel Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Package Length	Package Width
INFINEON IRS2118SPBF	IGBT MOSFET N-Channel MOSFET	8-SOIC	N-Channel	Inverting	9.5 V	6 V	600 V	600 mA	290 mA	-40 °C	150 °C	Surface Mount	35 ns	75 ns	High-Side	1	Single	10 VDC	20 V	0.154 in	3.9 mm
INFINEON IRS2118SPBF	IGBT MOSFET	8-SOIC	N-Channel	Inverting	9.5 V	6 V	600 V	600 mA	290 mA	-40 °C	150 °C	Surface Mount	35 ns	75 ns	High-Side	1	Single	10 VDC	20 V	0.154 in	3.9 mm
INFINEON IRS2118PBF	IGBT MOSFET N-Channel MOSFET	8-DIP 8-PDIP	N-Channel	Inverting	9.5 V	6 V	600 V	600 mA	290 mA	-40 °C	150 °C	Through Hole	35 ns	75 ns	High-Side	1	Single	10 VDC	20 V	0.3 in	7.62 mm
INFINEON IRS2118STRPBF	IGBT MOSFET N-Channel MOSFET	8-SOIC	N-Channel	Inverting	9.5 V	6 V	600 V	600 mA	290 mA	-40 °C	150 °C	Surface Mount	35 ns	75 ns	High-Side	1	Single	10 VDC	20 V	0.154 in	3.9 mm

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