IRS2118 Series
Manufacturer: INFINEON
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IC GATE DRVR HIGH-SIDE 8SOIC
| Part | Gate Type | Package Name | Gate Channel | Input Type | Logic Voltage - VIH | Logic Voltage - VIL | High Side Voltage - Max (Bootstrap) | Current - Peak Output (Sink) | Current - Peak Output (Source) | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Fall Time (Typ) | Rise Time (Typ) | Driven Configuration | Number of Drivers | Channel Type | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Package Length | Package Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | IGBT MOSFET N-Channel MOSFET | 8-SOIC | N-Channel | Inverting | 9.5 V | 6 V | 600 V | 600 mA | 290 mA | -40 °C | 150 °C | Surface Mount | 35 ns | 75 ns | High-Side | 1 | Single | 10 VDC | 20 V | 0.154 in | 3.9 mm |
INFINEON | IGBT MOSFET | 8-SOIC | N-Channel | Inverting | 9.5 V | 6 V | 600 V | 600 mA | 290 mA | -40 °C | 150 °C | Surface Mount | 35 ns | 75 ns | High-Side | 1 | Single | 10 VDC | 20 V | 0.154 in | 3.9 mm |
 INFINEON | IGBT MOSFET N-Channel MOSFET | 8-DIP 8-PDIP | N-Channel | Inverting | 9.5 V | 6 V | 600 V | 600 mA | 290 mA | -40 °C | 150 °C | Through Hole | 35 ns | 75 ns | High-Side | 1 | Single | 10 VDC | 20 V | 0.3 in | 7.62 mm |
 INFINEON | IGBT MOSFET N-Channel MOSFET | 8-SOIC | N-Channel | Inverting | 9.5 V | 6 V | 600 V | 600 mA | 290 mA | -40 °C | 150 °C | Surface Mount | 35 ns | 75 ns | High-Side | 1 | Single | 10 VDC | 20 V | 0.154 in | 3.9 mm |