PMPB33XP,115

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Nexperia USA Inc.

TRANS MOSFET P-CH 20V 5.5A 6-PIN DFN-MD EP T/R

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PMPB33XP,115

Active

Nexperia USA Inc.

TRANS MOSFET P-CH 20V 5.5A 6-PIN DFN-MD EP T/R

Find alt

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMPB33XP Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB33XP,115

Current - Continuous Drain (Id) (Ta)	5.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	23 nC
Input Capacitance (Ciss) (Max)	1575 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	12.5 W, 1.7 W
Rds On (Max)	37 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	900 mV

PMPB33XP Series

20 V, single P-channel Trench MOSFET

Part	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	Package / Case	Power Dissipation (Max)	Gate Charge (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Technology	Mounting Type	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type
Nexperia USA Inc. PMPB33XP,115	12 V	5.5 A	6-UDFN Exposed Pad	1.7 W 12.5 W	23 nC	37 mOhm	20 V	-55 °C	150 °C	1575 pF	900 mV	MOSFET (Metal Oxide)	Surface Mount	DFN2020MD-6	4.5 V	1.8 V	P-Channel