20 V, single P-channel Trench MOSFET
20 V, single P-channel Trench MOSFET
| Part | Vgs (Max) | Current - Continuous Drain (Id) (Ta) | Package / Case | Power Dissipation (Max) | Gate Charge (Max) | Rds On (Max) | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Technology | Mounting Type | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 12 V | 5.5 A | 6-UDFN Exposed Pad | 1.7 W 12.5 W | 23 nC | 37 mOhm | 20 V | -55 °C | 150 °C | 1575 pF | 900 mV | MOSFET (Metal Oxide) | Surface Mount | DFN2020MD-6 | 4.5 V | 1.8 V | P-Channel |