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BUK6Q66-60PJ

BUK6Q66-60PJ

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Nexperia USA Inc.

BUK6Q66-60P/SOT8002/MLPAK33

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BUK6Q66-60PJ

BUK6Q66-60PJ

Active
Nexperia USA Inc.

BUK6Q66-60P/SOT8002/MLPAK33

Find alt

Description

General part information

BUK6Q66-60P Series

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK6Q66-60PJ
Current - Continuous Drain (Id) (Tc)20 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)28 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1070 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerVDFN
Package NameMLPAK33
Power Dissipation (Max)56 W
QualificationAEC-Q101
Rds On (Max)66 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.7 V

Pricing

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CAD

3D models and CAD resources for this part