BUK6Q66-60P Series
Manufacturer: Nexperia USA Inc.
Catalog
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BUK6Q66-60P/SOT8002/MLPAK33
| Part | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Power Dissipation (Max) | Grade | Drain to Source Voltage (Vdss) | Rds On (Max) | FET Type | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Qualification | Vgs (Max) | Gate Charge (Max) | Package Name | Current - Continuous Drain (Id) (Tc) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1070 pF | -55 °C | 175 °C | 8-PowerVDFN | 56 W | Automotive | 60 V | 66 mOhm | P-Channel | MOSFET (Metal Oxide) | 10 V | 4.5 V | 2.7 V | AEC-Q101 | 20 V | 28 nC | MLPAK33 | 20 A | Surface Mount Wettable Flank |