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GT30J121 - IGBTs, 600 V/30 A IGBT, TO-3P(N)

TK7J90E,S1E

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Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 900 V, 2.0 Ω@10V, TO-3P(N), Π-MOSⅧ

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GT30J121 - IGBTs, 600 V/30 A IGBT, TO-3P(N)

TK7J90E,S1E

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 900 V, 2.0 Ω@10V, TO-3P(N), Π-MOSⅧ

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Description

General part information

TK7J90E Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 2.0 Ω@10V, TO-3P(N), π-MOSⅧ

Technical Specifications

Parameters and characteristics for this part

SpecificationTK7J90E,S1E
Current - Continuous Drain (Id) (Ta)7 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)32 nC
Input Capacitance (Ciss) (Max)1350 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-3P-3, SC-65-3
Package NameTO-3P(N)
Power Dissipation (Max)200 W
Rds On (Max)2 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
RC Snubbers for Step-Down Converters
Selection Guide MOSFETs 2025 Rev1.0
Simplified CFD Model Application Note
Reverse Recovery Operation and Destruction of MOSFET Body Diode
MOSFET Self-Turn-On Phenomenon
Structures and Characteristics: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Derating of the MOSFET Safe Operating Area
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
MOSFET SPICE model grade
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Avalanche energy calculation
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
TK7J90E Data sheet/Japanese
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Hints and Tips for Thermal Design part3
Calculating the Temperature of Discrete Semiconductor Devices
Electrical Characteristics: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
TK7J90E Data sheet/English
Motor Control (Vacuum Cleaners)