High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 2.0 Ω@10V, TO-3P(N), π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 2.0 Ω@10V, TO-3P(N), π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 2.0 Ω@10V, TO-3P(N), π-MOSⅧ
| Part | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Current - Continuous Drain (Id) (Ta) | Vgs (Max) | Input Capacitance (Ciss) (Max) | Mounting Type | Vgs(th) (Max) | Package Name | Rds On (Max) | Technology | Drain to Source Voltage (Vdss) | Operating Temperature | Power Dissipation (Max) | Package / Case | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 10 V | N-Channel | 7 A | 30 V | 1350 pF | Through Hole | 4 V | TO-3P(N) | 2 Ohm | MOSFET (Metal Oxide) | 900 V | 150 °C | 200 W | SC-65-3 TO-3P-3 | 32 nC |