PMDT290UNE,115

NRND

Nexperia USA Inc.

20 V, 800 MA DUAL N-CHANNEL TRENCH MOSFET

Find alt

Alpha

PMDT290UNE,115

NRND

Nexperia USA Inc.

20 V, 800 MA DUAL N-CHANNEL TRENCH MOSFET

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

PMDT290UNE Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMDT290UNE,115

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	800 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Max)	0.68 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	83 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-563, SOT-666
Package Name	SOT-666
Power - Max	0.5 W
Qualification	AEC-Q101
Rds On (Max)	380 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	950 mV

PMDT290UNE Series

20 V, 800 mA dual N-channel Trench MOSFET

Part	Gate Charge (Max)	Current - Continuous Drain (Id)	Channel Count	Configuration	Configuration - Features	Qualification	Operating Temperature (Min)	Operating Temperature (Max)	Technology	FET Feature	Power - Max	Grade	Rds On (Max)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max)	Package Name	Drain to Source Voltage (Vdss)	Vgs(th) (Max)
Nexperia USA Inc. PMDT290UNE,115	0.68 nC	800 mA	2	N-Channel	Dual	AEC-Q101	-55 °C	150 °C	MOSFET (Metal Oxide)	Logic Level Gate	0.5 W	Automotive	380 mOhm	Surface Mount	SOT-563 SOT-666	83 pF	SOT-666	20 V	950 mV