20 V, 800 mA dual N-channel Trench MOSFET
20 V, 800 mA dual N-channel Trench MOSFET
| Part | Gate Charge (Max) | Current - Continuous Drain (Id) | Channel Count | Configuration | Configuration - Features | Qualification | Operating Temperature (Min) | Operating Temperature (Max) | Technology | FET Feature | Power - Max | Grade | Rds On (Max) | Mounting Type | Package / Case | Input Capacitance (Ciss) (Max) | Package Name | Drain to Source Voltage (Vdss) | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 0.68 nC | 800 mA | 2 | N-Channel | Dual | AEC-Q101 | -55 °C | 150 °C | MOSFET (Metal Oxide) | Logic Level Gate | 0.5 W | Automotive | 380 mOhm | Surface Mount | SOT-563 SOT-666 | 83 pF | SOT-666 | 20 V | 950 mV |