Specification	SI1965DH-T1-BE3

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	1.14 A
Current - Continuous Drain (Id) (Tc)	1.3 A
Drain to Source Voltage (Vdss)	12 V
Gate Charge (Max)	4.2 nC
Input Capacitance (Ciss) (Max)	120 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Package Name	SC-70-6
Power - Max (Ta)	740 mW
Power - Max (Tc)	1.25 W
Rds On (Max)	390 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

SI1965 Series

Part	Gate Charge (Max)	Rds On (Max)	Vgs(th) (Max)	FET Feature	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id)	Channel Count	Configuration	Configuration - Features	Package Name	Mounting Type	Input Capacitance (Ciss) (Max)	Technology	Drain to Source Voltage (Vdss)	Power - Max	Package / Case	Power - Max (Ta)	Power - Max (Tc)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI1965DH-T1-GE3	4.2 nC	390 mOhm	1 V	Logic Level Gate	-55 °C	150 °C	1.3 A	2	P-Channel	Dual	SC-70-6	Surface Mount	120 pF	MOSFET (Metal Oxide)	12 V	1.25 VA	6-TSSOP SC-88 SOT-363
Vishay Dale SI1965DH-T1-BE3	4.2 nC	390 mOhm	1 V		-55 °C	150 °C		2	P-Channel	Dual	SC-70-6	Surface Mount	120 pF	MOSFET (Metal Oxide)	12 V		6-TSSOP SC-88 SOT-363	740 mW	1.25 W	1.3 A	1.14 A

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