SI1965 Series

Catalog

DUAL MOSFET, P CHANNEL, 12 V, 12 V, 1.3 A, 1.3 A, 0.315 OHM

Part	Gate Charge (Max)	Rds On (Max)	Vgs(th) (Max)	FET Feature	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id)	Channel Count	Configuration	Configuration - Features	Package Name	Mounting Type	Input Capacitance (Ciss) (Max)	Technology	Drain to Source Voltage (Vdss)	Power - Max	Package / Case	Power - Max (Ta)	Power - Max (Tc)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI1965DH-T1-GE3	4.2 nC	390 mOhm	1 V	Logic Level Gate	-55 °C	150 °C	1.3 A	2	P-Channel	Dual	SC-70-6	Surface Mount	120 pF	MOSFET (Metal Oxide)	12 V	1.25 VA	6-TSSOP SC-88 SOT-363
Vishay Dale SI1965DH-T1-BE3	4.2 nC	390 mOhm	1 V		-55 °C	150 °C		2	P-Channel	Dual	SC-70-6	Surface Mount	120 pF	MOSFET (Metal Oxide)	12 V		6-TSSOP SC-88 SOT-363	740 mW	1.25 W	1.3 A	1.14 A