SI4900DY-T1-GE3
ObsoleteVishay Dale
MOSFET 2N-CH 60V 5.3A 8SOIC
SI4900DY-T1-GE3
ObsoleteVishay Dale
MOSFET 2N-CH 60V 5.3A 8SOIC
Description
General part information
SI4900 Series
Mosfet Array 60V 5.3A 3.1W Surface Mount 8-SOIC
Technical Specifications
Parameters and characteristics for this part
| Specification | SI4900DY-T1-GE3 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 5.3 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 20 nC |
| Input Capacitance (Ciss) (Max) | 665 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Power - Max | 3.1 W |
| Rds On (Max) | 58 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
