SI4900 Series

Catalog

MOSFET 2N-CH 60V 5.3A 8SOIC

Part	Package Length	Package Name	Package Width	Rds On (Max)	Current - Continuous Drain (Id)	Mounting Type	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Gate Charge (Max)	Channel Count	Configuration	Configuration - Features	Power - Max	Operating Temperature (Min)	Operating Temperature (Max)	FET Feature	Drain to Source Voltage (Vdss)	Technology
Vishay Dale SI4900DY-T1-GE3	0.154 in	8-SOIC	3.9 mm	58 mOhm	5.3 A	Surface Mount	665 pF	3 V	20 nC	2	N-Channel	Dual	3.1 W	-55 °C	150 °C	Logic Level Gate	60 V	MOSFET (Metal Oxide)
Vishay Dale SI4900DY-T1-E3	0.154 in	8-SOIC	3.9 mm	58 mOhm	5.3 A	Surface Mount	665 pF	3 V	20 nC	2	N-Channel	Dual	3.1 W	-55 °C	150 °C	Logic Level Gate	60 V	MOSFET (Metal Oxide)