IR21271PBF

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EICEDRIVER™ 600 V HIGH-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: CURRENT SENSE, FAULT REPORTING, OVER-CURRENT PROTECTION (ITRIP), SINGLE INPUT

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IR21271PBF

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INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR21271 Series

600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.

Technical Specifications

Parameters and characteristics for this part

Specification	IR21271PBF

Channel Type	Single
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	40 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	3 V
Logic Voltage - VIL	0.8 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	8-DIP, 8-PDIP
Package Width	7.62 mm
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	9 VDC

IR21271 Series

Part	Gate Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Driven Configuration	High Side Voltage - Max (Bootstrap)	Package Length	Package Name	Package Width	Channel Type	Gate Channel	Fall Time (Typ)	Rise Time (Typ)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Mounting Type	Input Type	Number of Drivers	Logic Voltage - VIL	Logic Voltage - VIH
INFINEON IR21271PBF	IGBT MOSFET N-Channel MOSFET	9 VDC	20 V	High-Side Low-Side	600 V	0.3 in	8-DIP 8-PDIP	7.62 mm	Single	N-Channel	40 ns	80 ns	-40 °C	150 °C	500 mA	250 mA	Through Hole	Non-Inverting	1	0.8 V	3 V
INFINEON IR21271S	IGBT MOSFET N-Channel MOSFET	9 VDC	20 V	High-Side Low-Side	600 V	0.154 in	8-SOIC	3.9 mm	Single	N-Channel	40 ns	80 ns	-40 °C	150 °C	500 mA	250 mA	Surface Mount	Non-Inverting	1	0.8 V	3 V
INFINEON IR21271STR	IGBT MOSFET N-Channel MOSFET	9 VDC	20 V	High-Side Low-Side	600 V	0.154 in	8-SOIC	3.9 mm	Single	N-Channel	40 ns	80 ns	-40 °C	150 °C	500 mA	250 mA	Surface Mount	Non-Inverting	1	0.8 V	3 V
INFINEON IR21271PBF	IGBT MOSFET N-Channel MOSFET	9 VDC	20 V	High-Side Low-Side	600 V	0.3 in	8-DIP 8-PDIP	7.62 mm	Single	N-Channel	40 ns	80 ns	-40 °C	150 °C	500 mA	250 mA	Through Hole	Non-Inverting	1	0.8 V	3 V
INFINEON IR21271STRPBF	IGBT MOSFET N-Channel MOSFET	9 VDC	20 V	High-Side Low-Side	600 V	0.154 in	8-SOIC	3.9 mm	Single	N-Channel	40 ns	80 ns	-40 °C	150 °C	500 mA	250 mA	Surface Mount	Non-Inverting	1	0.8 V	3 V
INFINEON IR21271SPBF	IGBT MOSFET N-Channel MOSFET	9 VDC	20 V	High-Side Low-Side	600 V	0.154 in	8-SOIC	3.9 mm	Single	N-Channel	40 ns	80 ns	-40 °C	150 °C	500 mA	250 mA	Surface Mount	Non-Inverting	1	0.8 V	3 V
INFINEON IR21271	IGBT MOSFET N-Channel MOSFET	9 VDC	20 V	High-Side Low-Side	600 V	0.3 in	8-DIP 8-PDIP	7.62 mm	Single	N-Channel	40 ns	80 ns	-40 °C	150 °C	500 mA	250 mA	Through Hole	Non-Inverting	1	0.8 V	3 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IR21271PBF | Datasheet