IR21271 Series
Manufacturer: INFINEON
Beta
⌘K
EICEDRIVER™ 600 V HIGH-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: CURRENT SENSE, FAULT REPORTING, OVER-CURRENT PROTECTION (ITRIP), SINGLE INPUT
| Part | Gate Type | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Driven Configuration | High Side Voltage - Max (Bootstrap) | Package Length | Package Name | Package Width | Channel Type | Gate Channel | Fall Time (Typ) | Rise Time (Typ) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Peak Output (Sink) | Current - Peak Output (Source) | Mounting Type | Input Type | Number of Drivers | Logic Voltage - VIL | Logic Voltage - VIH |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | IGBT MOSFET N-Channel MOSFET | 9 VDC | 20 V | High-Side Low-Side | 600 V | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | Single | N-Channel | 40 ns | 80 ns | -40 °C | 150 °C | 500 mA | 250 mA | Through Hole | Non-Inverting | 1 | 0.8 V | 3 V |
 INFINEON | IGBT MOSFET N-Channel MOSFET | 9 VDC | 20 V | High-Side Low-Side | 600 V | 0.154 in | 8-SOIC | 3.9 mm | Single | N-Channel | 40 ns | 80 ns | -40 °C | 150 °C | 500 mA | 250 mA | Surface Mount | Non-Inverting | 1 | 0.8 V | 3 V |
INFINEON | IGBT MOSFET N-Channel MOSFET | 9 VDC | 20 V | High-Side Low-Side | 600 V | 0.154 in | 8-SOIC | 3.9 mm | Single | N-Channel | 40 ns | 80 ns | -40 °C | 150 °C | 500 mA | 250 mA | Surface Mount | Non-Inverting | 1 | 0.8 V | 3 V |
INFINEON | IGBT MOSFET N-Channel MOSFET | 9 VDC | 20 V | High-Side Low-Side | 600 V | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | Single | N-Channel | 40 ns | 80 ns | -40 °C | 150 °C | 500 mA | 250 mA | Through Hole | Non-Inverting | 1 | 0.8 V | 3 V |
 INFINEON | IGBT MOSFET N-Channel MOSFET | 9 VDC | 20 V | High-Side Low-Side | 600 V | 0.154 in | 8-SOIC | 3.9 mm | Single | N-Channel | 40 ns | 80 ns | -40 °C | 150 °C | 500 mA | 250 mA | Surface Mount | Non-Inverting | 1 | 0.8 V | 3 V |
 INFINEON | IGBT MOSFET N-Channel MOSFET | 9 VDC | 20 V | High-Side Low-Side | 600 V | 0.154 in | 8-SOIC | 3.9 mm | Single | N-Channel | 40 ns | 80 ns | -40 °C | 150 °C | 500 mA | 250 mA | Surface Mount | Non-Inverting | 1 | 0.8 V | 3 V |
 INFINEON | IGBT MOSFET N-Channel MOSFET | 9 VDC | 20 V | High-Side Low-Side | 600 V | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | Single | N-Channel | 40 ns | 80 ns | -40 °C | 150 °C | 500 mA | 250 mA | Through Hole | Non-Inverting | 1 | 0.8 V | 3 V |