Specification	2SC3326-A,LF

Current - Collector (Ic) (Max)	0.3 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	200
Frequency - Transition	30 MHz
Mounting Type	Surface Mount
Operating Temperature	125 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TO-236
Power - Max	150 mW
Transistor Type	NPN
Vce Saturation (Max)	100 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

2SC3326 Series

Bipolar Transistors, NPN Bipolar Transistor, 20 V, 0.3 A, SOT-346(S-Mini)

Part	DC Current Gain (hFE) (Min)	Mounting Type	Package Name	Frequency - Transition	Package / Case	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max)	Transistor Type	Current - Collector Cutoff (Max)	Power - Max	Operating Temperature
Toshiba Semiconductor and Storage 2SC3326-A,LF	200	Surface Mount	TO-236	30 MHz	SC-59 SOT-23-3 TO-236-3	0.3 mA	20 V	100 mV	NPN	100 nA	150 mW	125 °C
Toshiba Semiconductor and Storage 2SC3326-B,LF	350	Surface Mount	TO-236	30 MHz	SC-59 SOT-23-3 TO-236-3	0.3 mA	20 V	100 mV	NPN	100 nA	150 mW	125 °C

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