2SC3326-B,LF

Active

Toshiba Semiconductor and Storage

TRANS NPN 20V 0.3A TO236

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

TRANS NPN 20V 0.3A TO236

Technical Specifications

Parameters and characteristics for this part

Specification	2SC3326-B,LF

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	350
Frequency - Transition	30 MHz
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	150 mW
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	100 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Operating Temperature	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Package / Case	Mounting Type
Toshiba Semiconductor and Storage 2SC3326-B,LF	100 nA	20 V	30 MHz	300 mA	100 mV	125 ¯C	NPN	350	150 mW	SC-59 SOT-23-3 TO-236-3	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 20 V 300 mA 30MHz 150 mW Surface Mount TO-236

Technical documentation and resources