| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTW8N120K5N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package | Semiconductors - Discretes | 2 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTW8N90N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package | Semiconductors - Discretes | 3 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTW8N90K5N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package | Semiconductors - Discretes | 3 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTW8NK80ZN-channel 800 V, 1.3 Ohm, 6.2 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET | STPOWER N-channel MOSFETs > 700 V | 1 | 1 | The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including... Read More |
STMicroelectronicsSTW9 | FETs, MOSFETs | 2 | 1 | |
STMicroelectronicsSTW90N | Transistors | 1 | 8 | |
STMicroelectronicsSTW9N150N-channel 1500 V, 1.8 Ohm typ., 8 A PowerMESH Power MOSFET in a TO-247 package | Discretes | 3 | 1 | Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on)per area, unrivalled gate charge and switching characteristics. |
STMicroelectronicsSTW9NK90ZN-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-247 package | Power transistors | 3 | 1 | The SuperMESH series is obtained through an optimization of STMicroelectronics wellestablished strip-based PowerMESH layout. In addition to pushing on-resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This series complement STs full range of high voltage power MOSFETs. |
STMicroelectronicsSTWA12N120K5N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 long leads package | MDmesh K5 series | 1 | 1 | These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTWA20N95DK5N-channel 950 V, 275 mOhm typ., 18 A MDmesh DK5 Power MOSFET in a TO-247 long leads package | Power transistors | 1 | 1 | These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)* area and one of the most effective switching behaviors, ideal for half bridge and full... Read More |