| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTW75N60M6-4N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO247-4 package | Power transistors | 3 | 1 | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as... Read More |
STMicroelectronicsSTW75N65DM6-4N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO247-4 package | Semiconductors - Discretes | 4 | 1 | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market... Read More |
STMicroelectronicsSTW75NF20N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in TO-247 package | Power transistors | 1 | 1 | This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters |
STMicroelectronicsSTW77N65M5N-channel 650 V, 0.033 Ohm typ, 69 A MDmesh M5 Power MOSFET in TO-247 package | MDmesh M5 series | 1 | 1 | This device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior... Read More |
STMicroelectronicsSTW78N65M5Automotive-grade N-channel 650 V, 0.024 Ohm typ., 69 A MDmesh M5 Power MOSFET in a TO-247 package | STPOWER N-channel MOSFETs > 200 V to 700 V | 4 | 1 | This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior... Read More |
STMicroelectronicsSTW7N105K5N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-247 package | Single MOSFETs | 2 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTW7N90K5N-channel 900 V, 0.72 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package | Power transistors | 1 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTW7N95K3N-channel 950 V, 1.1 Ohm, 7.2 A, TO-247, Zener-protected SuperMESH3; Power MOSFET | STPOWER N-channel MOSFETs > 700 V | 2 | 1 | The new SuperMESH3 series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a very good dynamic performances coupled with a very... Read More |
STMicroelectronicsSTW7NK90ZN-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-247 package | STPOWER N-channel MOSFETs > 700 V | 2 | 1 | The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs. |
STMicroelectronicsSTW80N | Single FETs, MOSFETs | 2 | 8 | |