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STMicroelectronics
Series | Category | # Parts | Status | Description |
---|---|---|---|---|
Series | Category | # Parts | Status | Description |
---|---|---|---|---|
Diodes and rectifiers | 6 | 1 | The STTH212, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications.
Housed in axial, SMB, and SMC packages, this diode will reduce the losses in high switching freqency operations. | |
Single Diodes | 4 | 1 | The STTH25M06 is an ultrafast recovery power rectifier especially suited for boost or LLC clamping circuits working at high switching frequencies in heavy duty applications such as air conditioning equipment or telecom power supplies. Designed with the latest ST’s ultrafast technology, this 600 V 25 A diode in DPAK and... Read More | |
Single Diodes | 7 | 1 | The STTH25M06 is an ultrafast recovery power rectifier especially suited for boost or LLC clamping circuits working at high switching frequencies in heavy duty applications such as air conditioning equipment or telecom power supplies. Designed with the latest ST’s ultrafast technology, this 600 V 25 A diode in DPAK and... Read More | |
Diodes Transistors And Thyristors | 10 | 1 | The STTH2L06 is using ST Turbo 2 600 V planar Pt doping technology. It is specially suited for SMPS and base drive transistor circuits.
Packaged in axial, SMA and SMB, this device is intended for use in high frequency inverters, free wheeling and polarity protection. | |
Semiconductors - Discretes | 3 | 1 | The STTH2L06-Y is an ultrafast recovery power rectifier dedicated to energy recovery in automotive application housed in SMB Flat to improve space saving.
It is especially designed for clamping function in energy recovery block.
The compromise between forward voltage drop and recovery time offers optimized performances. | |
Semiconductors - Discretes | 7 | 1 | The STTH2R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.
Packaged in DO-15, SMA, and SMB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. | |
Semiconductors - Discretes | 4 | 1 | This 2 A, 200 V uses ST's 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. | |
Semiconductors - Discretes | 2 | 1 | The STTH2R02AF-Y, implementing ST’s new 200 V planar technology, is especially suited for switching mode base drive and transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications in automotive functions. | |
Automotive-grade diodes | 5 | 1 | The STTH2R02AY is based on ST´s 200 V planar Pt doping technology.
This is leading to best in class VF/QRRperformances, especially in high temperature environment.
Packaged in SMA package, this device is particularly suitable for high frequency operations in automotive applications. | |
Discretes | 14 | 1 | The STTH2R06 uses ST Turbo 2 600 V planar Pt doping technology. It is specially suited for switching mode base drive and transistor circuits.
Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection. |