STTH2R06 Series

600 V, 2 A, Turbo 2 Ultrafast Diode

Catalog

600 V, 2 A, Turbo 2 Ultrafast Diode

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Technology	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
STMicroelectronics STTH2R06RL	-40 °C	175 ░C	1.7 V	2 A	Standard	200 mA, 500 ns	50 ns	2 µA	Axial, DO-204AL, DO-41	DO-41	Through Hole	600 V
STMicroelectronics STTH2R06S	-40 °C	175 ░C	1.7 V	2 A	Standard	200 mA, 500 ns	50 ns	2 µA	DO-214AB, SMC	SMC	Surface Mount	600 V

Catalog

600 V, 2 A, Turbo 2 Ultrafast Diode

Description

The STTH2R06 uses ST Turbo 2 600 V planar Pt doping technology. It is specially suited for switching mode base drive and transistor circuits. Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection.