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Infineon Technologies
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
Infineon Technologies2385263 | Memory | 1 | 10 | |
Infineon Technologies24VS2 | Diodes | 1 | 8 | |
Infineon Technologies24VSHIELDBTT6030 | Evaluation Boards | 1 | 1 | |
Infineon Technologies2551483 | Integrated Circuits (ICs) | 1 | 10 | |
Infineon Technologies2603572 | Integrated Circuits (ICs) | 1 | 10 | |
Infineon Technologies28225511 | Integrated Circuits (ICs) | 1 | 10 | |
Infineon Technologies28576411 | Memory | 1 | 8 | |
Infineon Technologies2DIB0411 | Digital Isolators | 1 | 1 | |
Infineon Technologies2ED020 | Gate Drivers | 2 | 4 | |
Infineon Technologies2ED1321 | Integrated Circuits (ICs) | 1 | 1 | |
| Part | Memory Format | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Mounting Type | Memory Organization | Memory Interface | Package / Case | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Type | Technology | Clock Frequency | Memory Size | Current - Hold (Ih) (Max) [Max] | Number of SCRs, Diodes | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - On State (It (RMS)) (Max) [Max] | Voltage - Off State | Current - Gate Trigger (Igt) (Max) [Max] | Structure | Current - On State (It (AV)) (Max) [Max] | Voltage - Gate Trigger (Vgt) (Max) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package [x] | Supplier Device Package [y] | Data Rate | Protocol | Type | Gate Charge (Qg) (Max) @ Vgs | Current - Max [Max] | Resistance @ If, F | Capacitance @ Vr, F | Diode Type | Operating Temperature | Configuration | FET Feature | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id [Max] | Current - Collector (Ic) (Max) [Max] | Current - Collector Pulsed (Icm) | Test Condition | Reverse Recovery Time (trr) | Voltage - Collector Emitter Breakdown (Max) | Switching Energy | Vce(on) (Max) @ Vge, Ic | Gate Charge |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | SRAM | 70 °C | 0 °C | 165-FBGA (13x15) | Surface Mount | 1M x 18 | Parallel | 165-LBGA | 1.9 V | 1.7 V | Volatile | SRAM - Synchronous DDR II | 250 MHz | 18 Mbit | |||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies | 125 °C | -40 °C | Chassis Mount | TO-200AF | 350 mA | 1 SCR | 93000 A | 4120 A | 8 kV | 350 mA | Single | 3660 A | 2.5 V | ||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies | 150 °C | -55 °C | PG-SOT223-4-21 | Surface Mount | TO-261-4 TO-261AA | MOSFET (Metal Oxide) | 20 V | 120 mOhm | 60 V | 12 nC | 1.8 W | 10 V | N-Channel | 340 pF | 2.9 A | 4 V | |||||||||||||||||||||||||||||||||||||||||
Infineon Technologies | 70 °C | 0 °C | 28-PLCC | Surface Mount | 28-LCC (J-Lead) | 5.5 V | 4.5 V | 11.53 | 11.53 | 360 Mbps | Fibre Channel | Driver | |||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies | 150 °C | -55 °C | PG-TO247-4-U02 | Through Hole | TO-247-4 | MOSFET (Metal Oxide) | 20 V | 16 mOhm | 600 V | 521 W | 10 V | N-Channel | 7545 pF | 123 A | 4.7 V | 171 nC | |||||||||||||||||||||||||||||||||||||||||
Infineon Technologies | SCD-80 | SC-80 | 50 mA | 7 Ohm | 0.6 pF | PIN - Single | 150 °C | ||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies | 8-PQFN-Dual | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 14.9 mOhm | 30 V | 1165 pF | 11 A | 2.35 V | 3.3 | 3.3 | 15 nC | 2 N-Channel (Dual) | Logic Level Gate | 2.7 W | ||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies | 150 °C | -40 °C | CanPAK M™ MG-WDSON-2 | Surface Mount | 3-WDSON | MOSFET (Metal Oxide) | 20 V | 8.3 mOhm | 30 V | 18 nC | 2.2 W 36 W | 4.5 V 10 V | N-Channel | 13 A 53 A | 1800 pF | 2.2 V | |||||||||||||||||||||||||||||||||||||||||
Infineon Technologies | 175 °C | -40 C | TO-247AD | Through Hole | TO-247-3 | 455 W | 140 A | 225 A | 10 Ohm 15 V 75 A 400 V | 170 ns | 650 V | 2.2 mJ 2500 µJ | 2 V | 210 nC | |||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies | 175 ░C | -55 °C | D2PAK | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 20 V | 9.5 mOhm | 30 V | 57 W | 4.5 V 10 V | N-Channel | 1210 pF | 59 A | 2.25 V | 15 nC |