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Infineon Technologies

Series List(6458)

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SeriesCategory# PartsStatusDescription

Standalone parts(8364)

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PartMemory FormatOperating Temperature [Max]Operating Temperature [Min]Supplier Device PackageMounting TypeMemory OrganizationMemory InterfacePackage / CaseVoltage - Supply [Max]Voltage - Supply [Min]Memory TypeTechnologyClock FrequencyMemory SizeCurrent - Hold (Ih) (Max) [Max]Number of SCRs, DiodesCurrent - Non Rep. Surge 50, 60Hz (Itsm)Current - On State (It (RMS)) (Max) [Max]Voltage - Off StateCurrent - Gate Trigger (Igt) (Max) [Max]StructureCurrent - On State (It (AV)) (Max) [Max]Voltage - Gate Trigger (Vgt) (Max)Vgs (Max)Rds On (Max) @ Id, VgsDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ Vgs [Max]Power Dissipation (Max)Drive Voltage (Max Rds On, Min Rds On)FET TypeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSupplier Device Package [x]Supplier Device Package [y]Data RateProtocolTypeGate Charge (Qg) (Max) @ VgsCurrent - Max [Max]Resistance @ If, FCapacitance @ Vr, FDiode TypeOperating TemperatureConfigurationFET FeaturePower - Max [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]Vgs(th) (Max) @ Id [Max]Current - Collector (Ic) (Max) [Max]Current - Collector Pulsed (Icm)Test ConditionReverse Recovery Time (trr)Voltage - Collector Emitter Breakdown (Max)Switching EnergyVce(on) (Max) @ Vge, IcGate Charge
Infineon Technologies
CY7C1319SV18-250BZC
SRAM
70 °C
0 °C
165-FBGA (13x15)
Surface Mount
1M x 18
Parallel
165-LBGA
1.9 V
1.7 V
Volatile
SRAM - Synchronous
DDR II
250 MHz
18 Mbit
Infineon Technologies
T2871N80TOHXPSA1
125 °C
-40 °C
Chassis Mount
TO-200AF
350 mA
1 SCR
93000 A
4120 A
8 kV
350 mA
Single
3660 A
2.5 V
Infineon Technologies
BSP320SL6433
150 °C
-55 °C
PG-SOT223-4-21
Surface Mount
TO-261-4
TO-261AA
MOSFET (Metal Oxide)
20 V
120 mOhm
60 V
12 nC
1.8 W
10 V
N-Channel
340 pF
2.9 A
4 V
Infineon Technologies
CY7B9234-270JC
70 °C
0 °C
28-PLCC
Surface Mount
28-LCC (J-Lead)
5.5 V
4.5 V
11.53
11.53
360 Mbps
Fibre Channel
Driver
Infineon Technologies
IPZA60R016CM8XKSA1
150 °C
-55 °C
PG-TO247-4-U02
Through Hole
TO-247-4
MOSFET (Metal Oxide)
20 V
16 mOhm
600 V
521 W
10 V
N-Channel
7545 pF
123 A
4.7 V
171 nC
Infineon Technologies
BA895E6327
SCD-80
SC-80
50 mA
7 Ohm
0.6 pF
PIN - Single
150 °C
Infineon Technologies
IRFHM8363TR2PBF
8-PQFN-Dual
Surface Mount
8-PowerVDFN
MOSFET (Metal Oxide)
14.9 mOhm
30 V
1165 pF
11 A
2.35 V
3.3
3.3
15 nC
2 N-Channel (Dual)
Logic Level Gate
2.7 W
Infineon Technologies
BSF083N03LQG
150 °C
-40 °C
CanPAK M™
MG-WDSON-2
Surface Mount
3-WDSON
MOSFET (Metal Oxide)
20 V
8.3 mOhm
30 V
18 nC
2.2 W
36 W
4.5 V
10 V
N-Channel
13 A
53 A
1800 pF
2.2 V
Infineon Technologies
IRGP4790D-EPBF
175 °C
-40 C
TO-247AD
Through Hole
TO-247-3
455 W
140 A
225 A
10 Ohm
15 V
75 A
400 V
170 ns
650 V
2.2 mJ
2500 µJ
2 V
210 nC
Infineon Technologies
IRF3707ZS
175 ░C
-55 °C
D2PAK
Surface Mount
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
MOSFET (Metal Oxide)
20 V
9.5 mOhm
30 V
57 W
4.5 V
10 V
N-Channel
1210 pF
59 A
2.25 V
15 nC