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GigaDevice Semiconductor (HK) Limited
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
GigaDevice Semiconductor (HK) LimitedGD25VE32 | Integrated Circuits (ICs) | 1 | 1 | |
GigaDevice Semiconductor (HK) LimitedGD25VE40 | Memory | 1 | 4 | |
GigaDevice Semiconductor (HK) LimitedGD25VQ16 | Integrated Circuits (ICs) | 1 | 8 | |
GigaDevice Semiconductor (HK) LimitedGD25VQ32 | Memory | 1 | 8 | |
GigaDevice Semiconductor (HK) LimitedGD25VQ40 | Memory | 1 | 4 | |
GigaDevice Semiconductor (HK) LimitedGD25VQ80 | Memory | 1 | 10 | |
GigaDevice Semiconductor (HK) LimitedGD25WD05 | Memory | 3 | 1 | |
GigaDevice Semiconductor (HK) LimitedGD25WD10 | Integrated Circuits (ICs) | 2 | 1 | |
GigaDevice Semiconductor (HK) LimitedGD25WD20 | Memory | 3 | 1 | |
GigaDevice Semiconductor (HK) LimitedGD25WD40 | Integrated Circuits (ICs) | 4 | 1 | |
| Part | Access Time | Memory Type | Memory Interface | Clock Frequency | Voltage - Supply [Min] | Voltage - Supply [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Package / Case | Memory Format | Technology | Memory Size | Memory Organization | Write Cycle Time - Word, Page | Supplier Device Package | Memory Organization | Package / Case [y] | Package / Case [x] | Memory Organization [custom] | Memory Organization [custom] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | |||||||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | 9 ns | Non-Volatile | DTR Quad I/O SPI | 104 MHz | 1.7 V | 2 V | 85 °C | -40 °C | Surface Mount | 8-WDFN Exposed Pad | FLASH | FLASH - NAND (SLC) | 1 Mbit | 256 M | 600 µs | 8-WSON (5x6) | |||||||
GigaDevice Semiconductor (HK) Limited | |||||||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | Non-Volatile | DTR Quad I/O SPI | 200 MHz | 2.7 V | 3.6 V | 105 °C | -40 °C | Surface Mount | 8-XDFN Exposed Pad | FLASH | FLASH - NOR (SLC) | 64 Gbit | 8-USON (4x4) | 8M x 8 | |||||||||
GigaDevice Semiconductor (HK) Limited | |||||||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | Non-Volatile | DTR QPI Quad I/O SPI | 133 MHz | 2.7 V | 3.6 V | 85 °C | -40 °C | Surface Mount | 24-TBGA | FLASH | FLASH - NOR (SLC) | 64 MB | 64 M | 24-TFBGA (6x8) | |||||||||
GigaDevice Semiconductor (HK) Limited | 12 ns | Non-Volatile | SPI - Dual I/O | 100 MHz | 1.65 V | 3.6 V | 85 °C | -40 °C | Surface Mount | 8-SOIC | FLASH | FLASH - NOR (SLC) | 1024 KB | 8-SOP | 5.3 mm | 0.209 " | 1 M | 8 bits | 60 µs | 6 ms | |||
GigaDevice Semiconductor (HK) Limited | 12 ns | Non-Volatile | SPI - Quad I/O | 104 MHz | 1.65 V | 3.6 V | 85 °C | -40 °C | Surface Mount | 8-SOIC | FLASH | FLASH - NOR (SLC) | 64 Gbit | 8-SOP | 8M x 8 | 3.9 mm | 0.154 in | ||||||
GigaDevice Semiconductor (HK) Limited | 6 ns | Non-Volatile | SPI - Dual I/O | 104 MHz | 2.7 V | 3.6 V | 85 °C | -40 °C | Surface Mount | 8-XFDFN Exposed Pad | FLASH | FLASH - NOR (SLC) | 1 Mbit | 8-USON (1.5x1.5) | 128K x 8 | 100 µs | 4 ms | ||||||
GigaDevice Semiconductor (HK) Limited | 6 ns | Non-Volatile | QPI Quad I/O SPI | 133 MHz | 1.65 V | 2 V | 85 °C | -40 °C | Surface Mount | 8-XFDFN Exposed Pad | FLASH | FLASH - NOR (SLC) | 1024 KB | 8-USON (3x2) | 1 M | 8 bits | 60 µs | 2.4 ms |