74CB3Q16210 Series
3.3-V, 1:1 (SPST), 20-channel FET bus switch with 2 control inputs
Manufacturer: Texas Instruments
Catalog(2 parts)
| Part | Operating Temperature▲▼ | Operating Temperature▲▼ | Supplier Device Package | Package / Case | Voltage Supply Source | Voltage - Supply▲▼ | Voltage - Supply▲▼ | Circuit | Circuit▲▼ | Type | Independent Circuits▲▼ | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
-40 °C | 85 °C | 48-SSOP | 48-BSSOP (0.295", 7.50mm Width) | Single Supply | 3.5999999046325684 V | 2.299999952316284 V | 1:1 | 10 ul | Bus Switch | 2 ul | Surface Mount | |
-40 °C | 85 °C | 48-TFSOP | Single Supply | 3.5999999046325684 V | 2.299999952316284 V | 1:1 | 10 ul | Bus Switch | 2 ul | Surface Mount |
Key Features
• Member of the Texas Instruments Widebus™ FamilyHigh-Bandwidth Data Path (Up To 500 MHz)5-V Tolerant I/Os with Device Powered Up or Powered DownLow and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron= 5Typical)Rail-to-Rail Switching on Data I/O Ports0-V to 5-V Switching With 3.3-V VCC0-V to 3.3-V Switching With 2.5-V VCCBidirectional Data Flow, With Near-Zero Propagation DelayLow Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF)= 4 pF Typical)Fast Switching Frequency (fOE\= 20 MHz Max)Data and Control Inputs Provide Undershoot Clamp DiodesLow Power Consumption (ICC= 1 mA Typical)VCCOperating Range From 2.3 V to 3.6 VData I/Os Support 0 V to 5 V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS OutputsIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal GatingFor additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.Widebus is a trademark of Texas Instruments.Member of the Texas Instruments Widebus™ FamilyHigh-Bandwidth Data Path (Up To 500 MHz)5-V Tolerant I/Os with Device Powered Up or Powered DownLow and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron= 5Typical)Rail-to-Rail Switching on Data I/O Ports0-V to 5-V Switching With 3.3-V VCC0-V to 3.3-V Switching With 2.5-V VCCBidirectional Data Flow, With Near-Zero Propagation DelayLow Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF)= 4 pF Typical)Fast Switching Frequency (fOE\= 20 MHz Max)Data and Control Inputs Provide Undershoot Clamp DiodesLow Power Consumption (ICC= 1 mA Typical)VCCOperating Range From 2.3 V to 3.6 VData I/Os Support 0 V to 5 V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS OutputsIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal GatingFor additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.Widebus is a trademark of Texas Instruments.
Description
AI
The SN74CB3Q16210 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16210 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q16210 is organized as two 10-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 10-bit bus switches or as one 20-bit bus switch. When OE\ is low, the associated 10-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
The SN74CB3Q16210 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16210 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q16210 is organized as two 10-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 10-bit bus switches or as one 20-bit bus switch. When OE\ is low, the associated 10-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.