DSC08C065D1 Series

Silicon Carbide Schottky Diode

Catalog

Silicon Carbide Schottky Diode

Part	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)
Diodes Inc DSC08C065D1-13	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 ░C	-55 C	650 V	SiC (Silicon Carbide) Schottky	Surface Mount	1.7 V	200 mA 500 ns	278 pF	200 µA	8 A

Catalog

Silicon Carbide Schottky Diode

Key Features

• Low Conduction and Switching Loss

• High Temperature Application

• Positive Temperature Coefficient on VF

• Fast Reverse Recovery

• High Surge Current Capability

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

Packaged in the robust industry-standard TO252 (Type WX) package, the DIODESTM DSC08C065D1 provides excellent reverse leakage stability at high temperatures. It is ideal for use as a rectifier, freewheel diode, or blocking diode in: power factor correction, industrial motor drivers, power inverters, SMPS, UPS.