DIODE SIL CARB 650V 59A TO2472
| Part | Technology | Speed | Supplier Device Package | Reverse Recovery Time (trr) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Capacitance @ Vr, F | Current - Average Rectified (Io) | Mounting Type | Package / Case | Grade | Qualification | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Diode Configuration | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed E6D20065H | SiC (Silicon Carbide) Schottky | No Recovery Time | TO-247-2 | 0 ns | 175 ░C | -55 C | 1277 pF | 59 A | Through Hole | TO-247-2 | Automotive | AEC-Q101 | 1.5 V | 650 V | 75 µA | ||
Wolfspeed E6D20065A | SiC (Silicon Carbide) Schottky | No Recovery Time | TO-220-2 | 0 ns | 175 ░C | -55 C | 1277 pF | 68 A | Through Hole | TO-220-2 | Automotive | AEC-Q101 | 1.5 V | 650 V | 75 µA | ||
Wolfspeed E6D20065D | SiC (Silicon Carbide) Schottky | No Recovery Time | TO-247-3 | 0 ns | 175 ░C | -55 C | Through Hole | TO-247-3 | 1.5 V | 650 V | 50 µA | 1 Pair Common Cathode | 34 A | ||||
Wolfspeed E6D20065G | SiC (Silicon Carbide) Schottky | No Recovery Time | TO-263-2 | 0 ns | 175 ░C | -55 C | 1277 pF | 68 A | Surface Mount | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 1.5 V | 650 V | 75 µA |