CSD16556Q5B Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm

Part	Package / Case	Gate Charge (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package Width	Package Name	Package Length	Mounting Type	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	FET Type
Texas Instruments CSD16556Q5B	8-PowerTDFN	47 nC	3.2 W 191 W	100 A	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	1.7 V	6 mm	8-VSONP	5 mm	Surface Mount	6180 pF	25 V	10 V	4.5 V	1.07 mOhm	N-Channel

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm

Description

This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications. This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.