CSD17306Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm

Part	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	FET Type	Power Dissipation (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max)	Gate Charge (Max)	Vgs(th) (Max)	Package Width	Package Name	Package Length	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Package / Case
Texas Instruments CSD17306Q5A	2170 pF	3 V	8 V	N-Channel	3.2 W	-8 V	10 V	MOSFET (Metal Oxide)	30 V	Surface Mount	3.7 mOhm	15.3 nC	1.6 V	6 mm	8-VSONP	5 mm	-55 °C	150 °C	24 A	100 A	8-PowerTDFN

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm

Description

The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.