Catalog
N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) | Technology | Vgs(th) (Max) | Vgs (Max) | Mounting Type | Package / Case | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Current - Continuous Drain (Id) (Ta) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 500 mW | -55 °C | 150 °C | 400 mOhm 400 mOhm | MOSFET (Metal Oxide) | 900 mV | 12 V | Surface Mount | 3-XFDFN | N-Channel | 20 V | 56 pF | 1.3 nC | 4.5 V | 1.8 V | 1 A | X2-DFN1006-3 |
Diodes Inc | 500 mW | -55 °C | 150 °C | 400 mOhm 400 mOhm | MOSFET (Metal Oxide) | 900 mV | 12 V | Surface Mount | 3-XFDFN | N-Channel | 20 V | 56 pF | 1.3 nC | 4.5 V | 1.8 V | 1 A | X2-DFN1006-3 |