DMN2450UFB4-7R

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

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Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2450UFB4-7R

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.3 nC
Input Capacitance (Ciss) (Max) @ Vds	56 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	400 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

N-Channel Enhancement Mode MOSFET

Part	Technology	FET Type	Package / Case	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMN2450UFB4-7B	MOSFET (Metal Oxide)	N-Channel	3-XFDFN	500 mW	56 pF	-55 °C	150 °C	1 A	1.8 V 4.5 V	Surface Mount	20 V	12 V	900 mV	400 mOhm	1.3 nC
Diodes Inc DMN2450UFB4-7R	MOSFET (Metal Oxide)	N-Channel	3-XFDFN	500 mW	56 pF	-55 °C	150 °C	1 A	1.8 V 4.5 V	Surface Mount	20 V	12 V	900 mV	400 mOhm	1.3 nC

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General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources