CSD16325Q5 Series
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm
| Part | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Mounting Type | Technology | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD16325Q5 | 1.4 V | 25 V | 2 mOhm | 3 V, 8 V | -8 V, 10 V | 33 A, 100 A | 8-VSON-CLIP (5x6) | Surface Mount | MOSFET (Metal Oxide) | 25 nC | 8-PowerTDFN | 150 °C | -55 °C | 3.1 W | 4000 pF | N-Channel |
Key Features
• Optimized for 5 V Gate DriveUltralow Q g and Q gdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageOptimized for 5 V Gate DriveUltralow Q g and Q gdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package
Description
AI
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.