OPTIMOS™ P-CHANNEL POWER MOSFET -30 V ; SUPERSO8 5X6 PACKAGE; 3 MOHM;
| Part | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Technology | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TDSON-8-1 | -55 °C | 150 °C | 8-PowerTDFN | 25 V | 25.4 A 100 A | Surface Mount | MOSFET (Metal Oxide) | 2.5 W 125 W | 3.1 V | 6 V 10 V | P-Channel | 3 mOhm | 14000 pF | 186 nC | 30 V | |
Infineon Technologies | PG-WSON-8-2 | -55 °C | 175 ░C | 8-PowerWDFN | 20 V | 171 A | Surface Mount | MOSFET (Metal Oxide) | 188 W | 3.8 V | 6 V 10 V | N-Channel | 3 mOhm | 6500 pF | 100 V | 88 nC | |
Infineon Technologies | PG-TDSON-8-1 | -55 °C | 150 °C | 8-PowerTDFN | 20 V | 23 A 100 A | Surface Mount | MOSFET (Metal Oxide) | 2.5 W 83 W | 4 V | 10 V | N-Channel | 3 mOhm | 4900 pF | 40 V | 61 nC |