MOSFET N-CH 200V 52A TO263
| Part | Technology | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) @ Id | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUM52N20-39P-E3 | MOSFET (Metal Oxide) | 3.12 W, 250 W | 52 A | 38 mOhm | 10 V, 15 V | 4220 pF | N-Channel | TO-263 (D2PAK) | 200 V | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 4.5 V | Surface Mount | -55 °C | 175 ░C | 25 V | 185 nC |