SUM52N20-39P-E3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 52A TO263

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 52A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM52N20-39P-E3

Current - Continuous Drain (Id) @ 25°C	52 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	185 nC
Input Capacitance (Ciss) (Max) @ Vds	4220 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.12 W, 250 W
Rds On (Max) @ Id, Vgs	38 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 52A (Tc) 3.12W (Ta), 250W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

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