CSD18541F5 Series

60-V, N channel NexFET™ power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection

Catalog

60-V, N channel NexFET™ power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection

Part	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Package / Case	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Technology	FET Type	Gate Charge (Max)	Package Name	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)
Texas Instruments CSD18541F5T	2.2 V	777 pF	60 V	65 mOhm	3-SMD No Lead	20 V	500 mW	10 V	4.5 V	Surface Mount	MOSFET (Metal Oxide)	N-Channel	14 nC	3-PICOSTAR	2.2 A	-55 °C	150 °C
Texas Instruments CSD18541F5	2.2 V	777 pF	60 V	65 mOhm	3-SMD No Lead	20 V	500 mW	10 V	4.5 V	Surface Mount	MOSFET (Metal Oxide)	N-Channel	14 nC	3-PICOSTAR	2.2 A	-55 °C	150 °C

Catalog

60-V, N channel NexFET™ power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection

Description

This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.