CSD18502 Series

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Part	Gate Charge (Max)	Vgs(th) (Max)	Package Name	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Package Width	Package Length
Texas Instruments CSD18502KCS	62 nC	2.1 V	TO-220-3	20 V	40 V	Through Hole	MOSFET (Metal Oxide)	4680 pF	10 V	4.5 V	N-Channel	-55 °C	175 °C	2.9 mOhm	100 A	TO-220-3	259 W
Texas Instruments CSD18502Q5B	68 nC	2.2 V	8-VSON-CLIP	20 V	40 V	Surface Mount	MOSFET (Metal Oxide)	5070 pF	10 V	4.5 V	N-Channel	-55 °C	150 °C	2.3 mOhm	100 A	8-PowerTDFN	3.2 W 156 W	26 A	6 mm	5 mm
Texas Instruments CSD18502Q5BT	33 nC	2.2 V	8-VSON-CLIP	20 V	40 V	Surface Mount	MOSFET (Metal Oxide)	5070 pF	10 V	4.5 V	N-Channel	-55 °C	150 °C	2.3 mOhm		8-PowerTDFN	3.2 W 156 W	100 A	6 mm	5 mm

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Description

This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.