NSS60100DMT Series

Dual 60 V, 1 A, Low VCE(sat) PNP Bipolar Transistors in WDFN6

Catalog

Dual 60 V, 1 A, Low VCE(sat) PNP Bipolar Transistors in WDFN6

Part	Current - Collector (Ic) (Max)	Power - Max	Operating Temperature (Min)	Operating Temperature (Max)	Frequency - Transition	Mounting Type	Package / Case	Vce Saturation (Max)	PNP Count	Transistor Configuration	Transistor Type	Package Width	Package Name	Package Length	DC Current Gain (hFE) (Min)	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor NSV60100DMTWTBG	1 A	2.27 W	-55 °C	150 °C	155 MHz	Surface Mount	6-WDFN Exposed Pad	300 mV	2	Dual	PNP	2 mm	6-WDFN	2 mm	120	100 nA	60 V
ON Semiconductor NSS60100DMTTBG	1 A	2.27 W	-55 °C	150 °C	155 MHz	Surface Mount	6-WDFN Exposed Pad	300 mV	2	Dual	PNP	2 mm	6-WDFN	2 mm	120	100 nA	60 V

Catalog

Dual 60 V, 1 A, Low VCE(sat) PNP Bipolar Transistors in WDFN6

Key Features

• Continuous Collector Current(IC) = -1 APeak Collector Current (ICM) = -2 A

• Low VCE(sat): -200 mV @ IC= -1 A, IB= -100 mA (Beta: IC/IB= 10)

• hFEof 140 @ IC= -1 A, VCE= -2 V

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• NSV60100DMTWTBG - Wettable Flanks Packaged Device

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Description

ON Semiconductor’s e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability in a small form factor, 2x2 mm plastic leadless package. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.