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NSV60100DMTWTBG

NSV60100DMTWTBG

Obsolete
ON Semiconductor

DUAL 60 V, 1 A, LOW V<SUB>CE(SAT)</SUB> PNP BIPOLAR TRANSISTORS IN WDFN6

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NSV60100DMTWTBG

NSV60100DMTWTBG

Obsolete
ON Semiconductor

DUAL 60 V, 1 A, LOW V<SUB>CE(SAT)</SUB> PNP BIPOLAR TRANSISTORS IN WDFN6

Find alt

Description

General part information

NSS60100DMT Series

ON Semiconductor’s e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability in a small form factor, 2x2 mm plastic leadless package. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

Technical Specifications

Parameters and characteristics for this part

SpecificationNSV60100DMTWTBG
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)120
Frequency - Transition155 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-WDFN Exposed Pad
Package Length2 mm
Package Name6-WDFN
Package Width2 mm
PNP Count2
Power - Max2.27 W
Transistor ConfigurationDual
Transistor TypePNP
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part