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74TVC3010 Series

6.5-V, 1:1 (SPST), 10-channel voltage clamp

Manufacturer: Texas Instruments

Catalog(6 parts)

PartLogic TypeNumber of BitsPackage / CasePackage / CasePackage / CaseSupplier Device PackageOperating TemperatureOperating TemperatureMounting TypePackage / CasePackage / CasePackage / CasePackage / Case
Texas Instruments
SN74TVC3010PWR
Voltage Clamp IC 24-TSSOP
Voltage Clamp
10 ul
0.004399999976158142 m
0.004394200164824724 m
24-TSSOP
24-TSSOP
-40 °C
85 °C
Surface Mount
Texas Instruments
SN74TVC3010DBQR
Voltage Clamp IC 24-SSOP
Voltage Clamp
10 ul
24-SSOP
24-SSOP
-40 °C
85 °C
Surface Mount
Texas Instruments
SN74TVC3010DGVR
Voltage Clamp IC 24-TVSOP
Voltage Clamp
10 ul
24-TFSOP (0.173", 4.40mm Width)
24-TVSOP
-40 °C
85 °C
Surface Mount
0.004394200164824724 m
0.004399999976158142 m
Texas Instruments
SN74TVC3010DGVRG4
Voltage Clamp IC 24-TVSOP
Voltage Clamp
10 ul
24-TFSOP (0.173", 4.40mm Width)
24-TVSOP
-40 °C
85 °C
Surface Mount
0.004394200164824724 m
0.004399999976158142 m
Texas Instruments
SN74TVC3010DBQRG4
Voltage Clamp IC 24-SSOP
Voltage Clamp
10 ul
24-SSOP
24-SSOP
-40 °C
85 °C
Surface Mount
Texas Instruments
SN74TVC3010DW
Voltage Clamp IC 24-SOIC
Voltage Clamp
10 ul
24-SOIC
24-SOIC
-40 °C
85 °C
Surface Mount
0.007499999832361937 m
0.007493000011891127 m

Key Features

Designed to be Used in Voltage-Limiting Applications6.5-On-State Connection Between Ports A and BFlow-Through Pinout for Ease of Printed Circuit Board Trace RoutingDirect Interface With GTL+ LevelsESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)1000-V Charged-Device Model (C101)Designed to be Used in Voltage-Limiting Applications6.5-On-State Connection Between Ports A and BFlow-Through Pinout for Ease of Printed Circuit Board Trace RoutingDirect Interface With GTL+ LevelsESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)1000-V Charged-Device Model (C101)

Description

AI
The SN74TVC3010 provides 11 parallel NMOS pass transistors with a common gate. The low on-state resistance of the switch allows connections to be made with minimal propagation delay. The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor. The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor. This is done to protect components with inputs that are sensitive to high-state voltage-level overshoots. (See Application Information in this data sheet.) All of the transistors in the TVC array have the same electrical characteristics; therefore, any one of them can be used as the reference transistor. Since, within the device, the characteristics from transistor to transistor are equal, the maximum output high-state voltage (VOH) is approximately the reference voltage (VREF), with minimal deviation from one output to another. This is a large benefit of the TVC solution over discrete devices. Because the fabrication of the transistors is symmetrical, either port connection of each bit can be used as the low-voltage side, and the I/O signals are bidirectional through each FET. The SN74TVC3010 provides 11 parallel NMOS pass transistors with a common gate. The low on-state resistance of the switch allows connections to be made with minimal propagation delay. The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor. The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor. This is done to protect components with inputs that are sensitive to high-state voltage-level overshoots. (See Application Information in this data sheet.) All of the transistors in the TVC array have the same electrical characteristics; therefore, any one of them can be used as the reference transistor. Since, within the device, the characteristics from transistor to transistor are equal, the maximum output high-state voltage (VOH) is approximately the reference voltage (VREF), with minimal deviation from one output to another. This is a large benefit of the TVC solution over discrete devices. Because the fabrication of the transistors is symmetrical, either port connection of each bit can be used as the low-voltage side, and the I/O signals are bidirectional through each FET.