CSD16408 Series
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.8 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.8 mOhm
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Package / Case | Vgs(th) (Max) @ Id [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | Vgs (Max) [Min] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD16408Q5 | 25 V | 3.1 W | Surface Mount | 150 °C | -55 °C | 4.5 mOhm | 8-PowerTDFN | 2.1 V | 4.5 V, 10 V | N-Channel | 8.9 nC | MOSFET (Metal Oxide) | 1300 pF | 22 A, 113 A | 16 V | -12 V | 8-VSONP (5x6) |
Key Features
• Ultralow Q g and Q gdLow Thermal ResistanceAvalanche RatedSON 5-mm × 6-mm Plastic PackageUltralow Q g and Q gdLow Thermal ResistanceAvalanche RatedSON 5-mm × 6-mm Plastic Package
Description
AI
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.