74HC03 Series

4-ch, 2-input, 2-V to 6-V 5.2 mA drive strength NAND gate with open-drain outputs

Catalog

4-ch, 2-input, 2-V to 6-V 5.2 mA drive strength NAND gate with open-drain outputs

Part	Current - Quiescent (Max)	Max Propagation Delay	Max CL	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Input Logic Level - High (Max)	Input Logic Level - High (Min)	Package Name	Number of Inputs	Input Logic Level - Low (Min)	Input Logic Level - Low (Max)	Package Width	Package Length	Number of Circuits	Operating Temperature (Min)	Operating Temperature (Max)	Current - Output Low	Mounting Type	Features	Logic Type
Texas Instruments SN74HC03DRG4	2 µA	23 ns	50 pF	2 V	6 V	4.2 V	1.5 V	14-SOIC	2	0.5 V	1.8 V	3.9 mm	0.154 in	4	-40 °C	85 °C	5.2 mA	Surface Mount	Open Drain	NAND Gate
Texas Instruments CD74HC03MT	2 µA	17 ns	50 pF	2 V	6 V	4.2 V	1.5 V	14-SOIC	2	0.5 V	1.8 V	3.9 mm	0.154 in	4	-55 °C	125 °C	5.2 mA	Surface Mount	Open Drain	NAND Gate
Texas Instruments SN74HC03PW	2 µA	23 ns	50 pF	2 V	6 V	4.2 V	1.5 V	14-TSSOP	2	0.5 V	1.8 V	4.4 mm	0.173 in	4	-40 °C	85 °C	5.2 mA	Surface Mount	Open Drain	NAND Gate
Texas Instruments MM74HC03N	2 µA	23 ns	50 pF	2 V	6 V	4.2 V	1.5 V	14-DIP 14-PDIP	2	0.5 V	1.8 V	7.62 mm	0.3 in	4	-40 °C	85 °C	5.2 mA	Through Hole	Open Drain	NAND Gate
Texas Instruments CD74HC03M96	2 µA	17 ns	50 pF	2 V	6 V	4.2 V	1.5 V	14-SOIC	2	0.5 V	1.8 V	3.9 mm	0.154 in	4	-55 °C	125 °C	5.2 mA	Surface Mount	Open Drain	NAND Gate
Texas Instruments SN74HC03N	2 µA	23 ns	50 pF	2 V	6 V	4.2 V	1.5 V	14-DIP 14-PDIP	2	0.5 V	1.8 V	7.62 mm	0.3 in	4	-40 °C	85 °C	5.2 mA	Through Hole	Open Drain	NAND Gate
Texas Instruments SN74HC03NG4	2 µA	23 ns	50 pF	2 V	6 V	4.2 V	1.5 V	14-DIP 14-PDIP	2	0.5 V	1.8 V	7.62 mm	0.3 in	4	-40 °C	85 °C	5.2 mA	Through Hole	Open Drain	NAND Gate
Texas Instruments CD74HC03E	2 µA	17 ns	50 pF	2 V	6 V	4.2 V	1.5 V	14-DIP 14-PDIP	2	0.5 V	1.8 V	7.62 mm	0.3 in	4	-55 °C	125 °C	5.2 mA	Through Hole	Open Drain	NAND Gate
Texas Instruments SN74HC03NS	2 µA	23 ns	50 pF	2 V	6 V	4.2 V	1.5 V	14-SO 14-SOIC	2	0.1 V	0.26 V	5.3 mm	0.209 in	4	-40 °C	85 °C	5.2 mA	Surface Mount	Open Drain	NAND Gate
Texas Instruments SN74HC03NSR	2 µA	23 ns	50 pF	2 V	6 V	4.2 V	1.5 V	14-SO 14-SOIC	2	0.5 V	1.8 V	5.3 mm	0.209 in	4	-40 °C	85 °C	5.2 mA	Surface Mount	Open Drain	NAND Gate

Catalog

4-ch, 2-input, 2-V to 6-V 5.2 mA drive strength NAND gate with open-drain outputs

Description

The ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family. These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2. The ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family. These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2.